Partners:
Neel institute is a research unit of CNRS. Equipments available for the project are micro-spectroscopy set-ups for the optical study of individual QDs in
the visible range including magneto-optics cryostat, tuneable single mode lasers and pulsed lasers for resonant excitation, and a MBE machine dedicated to the growth of II-VI (magnetic)
semiconductors. Nanofabrication of the SAW devices takes place in Nanofab, a state of the art clean room facility which is part of Néel Institute.
L. Besombes, coordinator, is responsible for the optical spectroscopy. H. Boukari develops the growth of magnetic QDs and the nano-fabrication
of devices. J-P. Poizat, expert in opto-mechanics, assists for the design and optical study of single spin SAW devices
C2N is a research unit of CNRS and University Paris-Saclay. STM and STS experiments are performed on two complementary apparatus: a versatile 4K-STM and a state of the art SubKelvin-STM with 3D magnetic field. These experiments are conducted by two expert researchers, J-C. Girard and G. Rodary. They are supported by an engineer C. David. J.-C. Girard brings his expertise on cross-sectional STM of dopants, while G. Rodary applies his competences in STM spin dependent measurements on single atoms. Both of them are involved in the atomic manipulation development. M. Amato, whose expertise covers ab initio calculations of structural, electronic and optical properties of nanostructures, develops DFT calculation for Cr in GaAs.
INAC is a joint research institute between CEA and University Grenoble Alpes. Relevant to the project is the expertise of the L_Sim group (Laboratoitre de simulation atomistique)
in simulation of the structure and properties of materials. P. Pochet, specialist of atomistic simulation in the field of point defect engineering and nanostructure growth and D. Caliste
specialized in defect simulation for various semiconductor materials, will supervise a PhD student (funded by the ANR) on the modelling of Cr structure and STM substitution of Cr in II-VI
and III-V semiconductors.
To support the growth work-package, additional expertise in HRXRD and quantitative EDX characterizations are provided by E. Bellet-Amalric and E. Robin respectively.
Interactions:
The repartition of work and the main interactions between the partners are summarized in the figure below (in red the exchanges of information and in blue the exchanges of samples.)
